U.S. flag

An official website of the United States government, Department of Justice.

NCJRS Virtual Library

The Virtual Library houses over 235,000 criminal justice resources, including all known OJP works.
Click here to search the NCJRS Virtual Library

Metal–Semiconductor Contacts Induce the Charge-Transfer Mechanism of Surface-Enhanced Raman Scattering

NCJ Number
304214
Journal
Journal of Physical Chemistry C Volume: 115 Issue: 37 Dated: 2011 Pages: 18378-18383
Author(s)
Zhu Mao; et al
Date Published
2011
Length
6 pages
Annotation

Using a model metal–semiconductor–molecule–metal assembly  designed for probing the charge-transfer (CT) mechanism of surface-enhanced Raman scattering (SERS), the current project measured the SERS of ZnO–PATP–Ag, Au–ZnO–PATP–Ag, and Cu–ZnO–PATP–Ag assemblies at excitation wavelengths of 514.5, 785, and 1064 nm.

 

Abstract

The results demonstrate that the metal–semiconductor contact can alter the charge distribution through p-aminothiophenol (PATP) molecules. This is attributed to the chemical SERS enhancement mechanism with additional electrical transport properties within these assemblies. These inhibit the CT from the metal to the molecule, resulting in the different degrees to which CT contributes to the overall SERS enhancement of PATP. (publisher abstract modified)